Point defects calculation
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In the context of periodic first-principles calculation of charged point defects in semiconductor, the defect formation energy, \(E^{q}_{f}\) of a point defect \(X\) with charge state \(q\) is defined as a function of the Fermi level \(E_F\) as:
where, \(E_{\mathrm{tot}}^{q}(X)\) is the total energy of the defective supercell, \(E_{\mathrm{tot}}(\mathrm{bulk})\) is the total energy of the pristine supercell, \(n_i\) is the number of the \(i\)-th atoms being added to the pristine system to create the defective supercell (so \(n=-1\) for a vacancy), \(\mu_i\) is the chemical potential of the \(i\)-th atoms calculated using the same pseudopotential, \(E_{VBM}^{\mathrm{bulk}}\) is the valence band maximum of the pristine supercell, and \(\Delta V_{q/\mathrm{bulk}}\) is the potential alignment term between pristine bulk supercell and defective charged supercell.
Transition Levels
From now on, let us consider the example of Zn-substituted Cu impurity with nearest neighbor S vacancy defect comples in zinc blende ZnS, i.e., \((\mathrm{Cu}_{\mathrm{Zn}}\)-\(V_{\mathrm{S}})\) in ZnS.
Chemical potentials
It is customery to reference the chemical potentials to their bulk phases. In case of \(\mathrm{ZnS}\), there are two extreme growth conditions: the \(\mathrm{Zn}\)-rich and the \(\mathrm{Zn}\)-poor conditions. According to the thermodynamic stability constraint, we have:
or alternatively,
The \(\mathrm{Zn}\)-rich or in other words \(\mathrm{S}\)-poor limit of chemical potentials
Heat of formation
For a material to be thermodynamically stable, the heat of formation \(\Delta H_f < 0\). In terms of the chemical potential, it is given as:
In practice, \(\mu_{\mathrm{ZnS}}\) is obtained as the total energy per formula unit, and the elemental (emphasized with a \(0\) superscript) chemical potentials \(\mu_{\mathrm{Zn}}^{0}\) and \(\mu_{\mathrm{S}}^{0}\) are obtained as the total energy per atom of bulk \(\mathrm{Zn}\) in the HCP structure and \(\mathrm{S_2}\) molecule in gas phase: